Characterization of copper grain growth limitations inside narrow wires depending of overburden thickness

Microelectronic Engineering

Volumn 85, Issue 10, 2008, Pages 1988-1991

  Dubreuil, O ^a,c   Cordeau, M ^a,b   Mourier, Th ^a,b   Chausse, P ^b   Mellier, M ^a   Bellet, D ^c   Torres, J ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

Author keywords

Copper; Crystallization; Electro chemical deposition; Overburden; Pre CMP

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; COPPER; CRYSTALLIZATION; ECOLOGY; ELECTROCHEMICAL SENSORS; ELECTROCHROMIC DEVICES; ELECTROOPTICAL DEVICES; GRAIN (AGRICULTURAL PRODUCT); GRAIN SIZE AND SHAPE; NANOCRYSTALLINE ALLOYS; NANOTECHNOLOGY; OPTICAL INTERCONNECTS; REDUCTION; WIRE;

COPPER INTERCONNECTS; DOWN-SCALING; ELECTRICAL PERFORMANCES; ELECTRICAL VARIATIONS; ELECTRO-CHEMICAL DEPOSITION; FEATURE DIMENSIONS; GRAIN GROWTH CONTROL; MORPHOLOGICAL ASPECTS; NARROW WIRES; OVERBURDEN; PRE-CMP; SAMPLE PREPARATIONS;

GRAIN GROWTH;

EID: 52349109853     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.005     Document Type: Article

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