Study of the effect of dielectric porosity on the stress in advanced Cu/low- k interconnects using x-ray diffraction

Applied Physics Letters

Volumn 94, Issue 18, 2009, Pages

  Wilson, C J ^a,b   Zhao, C ^b   Zhao, L ^c   Metzger, T H ^d   Tkei, Zs ^b   Croes, K ^b   Pantouvaki, M ^b   Beyer, G P ^b   Horsfall, A B ^a   O'Neill, A G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

^c Intel Corporation Belgium   (Belgium)

^d EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AIR GAPS; ATOMIC SPACINGS; BLANKET WAFERS; CU-INTERCONNECTS; CU/LOW-K INTERCONNECTS; HIGH INTENSITIES; HIGH POROSITIES; IN PLANES; MATERIAL STIFFNESS; STRAIN-FREE; ULTRA-LOW-K DIELECTRICS; X- RAY DIFFRACTIONS;

ATOMS; DIELECTRIC MATERIALS; LIGHT; OPTICAL INTERCONNECTS;

POROSITY;

EID: 65549138504     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3133345     Document Type: Article

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