Porosity effects on low-k dielectric film strength and interfacial adhesion

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 242-244

  Kloster, G ^a   Scherban, T ^a   Xu, G ^a   Blaine, J ^a   Sun, B ^a   Zhou, Y ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; CARBON; DIELECTRIC FILMS; HARDNESS; INTERFACES (MATERIALS); LOW-K DIELECTRIC; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; POLYMER FILMS; PORE SIZE; POROSITY;

E-BEAM TREATMENT; FOUR POINT BEND METHODS; INTERFACIAL ADHESIONS; NON-POROUS FILMS; ORGANOSILOXANE FILMS; POROSITY EFFECT; SIZE MEASUREMENTS; SOLID STATE NMR;

DIELECTRIC MATERIALS;

EID: 84961689594     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2002.1014946     Document Type: Conference Paper

References (2)

1. Q. Ma, "A Four-Point Bending Technique for Studying Subcritical Crack Growth in Thin Films and at Interfaces," J. Materials Research, 12, 840-845, 1997.
2. T. Scherban, B. Sun, J. Blaine, C. Block, B. Jin, E. Andideh, "Interfacial Adhesion of Cupper-Low k Interconnects", in 2001 IEEE International Interconnect Technology Conference Proceedings, pp 257-259