Aluminum-assisted crystallization and p-type doping of polycrystalline Si

Applied Physics A: Materials Science and Processing

Volumn 97, Issue 2, 2009, Pages 375-380

  Huang, S Y ^a   Xu, S ^a   Cheng, Q J ^b,c   Long, J D ^a   Ostrikov, K ^b,c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CSIRO   (Australia)

^c UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM TARGET; AMORPHOUS SI; COLUMNAR STRUCTURES; CONVENTIONAL TECHNIQUES; CRYSTALLINE FRACTIONS; EFFECT ANALYSIS; GLASS SUBSTRATES; LOW SUBSTRATE TEMPERATURE; P-TYPE; P-TYPE DOPING; POLYCRYSTALLINE SILICON THIN FILM; POLYCRYSTALLINE-SI; RF-MAGNETRON SPUTTERING; STRUCTURAL AND ELECTRICAL PROPERTIES; UNDERLYING MECHANISM; VERTICALLY ALIGNED;

ALUMINA; ALUMINUM; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; HOLE CONCENTRATION; INDUCTIVELY COUPLED PLASMA; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; POLYSILICON; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TARGETS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS SILICON;

EID: 70349273756     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-009-5220-4     Document Type: Article

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