Electrical properties of solid-phase crystallized polycrystalline silicon films

Applied Physics A: Materials Science and Processing

Volumn 77, Issue 1, 2003, Pages 87-92

  Watanabe, T ^a   Watakabe, H ^a   Sameshima, T ^a   Miyasaka, M ^b  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CURRENT MEASUREMENT; EXCIMER LASERS; GRAIN BOUNDARIES; HALL EFFECT; HEAT TREATMENT; LIGHT ABSORPTION; NUMERICAL ANALYSIS; POLYCRYSTALLINE MATERIALS; VOLUME FRACTION;

FREE CARRIER OPTICAL ABSORPTION; HALL EFFECT CURRENT MEASUREMENT; SOLID-PHASE CRYSTALLIZED POLYCRYSTALLINE SILICON FILMS;

AMORPHOUS FILMS;

EID: 0037532555     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-002-1513-6     Document Type: Article

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