Deposition of nanocrystalline silicon films (nc-Si:H) from a pure ECWR-SiH4 plasma

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 895-898

  Scheib, M ^a   Schroder B ^a   Oechsner, H ^a  

^a Rheinland Pfälzische Technische Universität Kaiserslautern Landau   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISSOCIATION; ELECTRON CYCLOTRON RESONANCE; GLOW DISCHARGES; HYDROGEN; MAGNETIC FIELDS; MASS SPECTROMETRY; NANOSTRUCTURED MATERIALS; PLASMAS; SEMICONDUCTING SILICON; SILANES; THERMAL EFFECTS;

CONVENTIONAL GLOW DISCHARGE TECHNIQUE; ELECTRON CYCLOTRON WAVE RESONANCE; HIGH HYDROGEN DILUTION; HYDROGENATED NANOCRYSTALLINE SILICON FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY NEUTRAL MASS SPECTROMETRY;

SEMICONDUCTING FILMS;

EID: 0030563516     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00078-6     Document Type: Article

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