Characterization of polycrystalline silicon thin films fabricated by rapid joule heating method

Applied Physics A: Materials Science and Processing

Volumn 79, Issue 3, 2004, Pages 599-603

  Sameshima, T ^a   Motai, K ^a   Andoh, N ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL DEFECTS; CRYSTALLIZATION; DENSITY (SPECIFIC GRAVITY); POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; THRESHOLD VOLTAGE;

DOPANT ACTIVATION; OXYGEN PLASMA; RAPID JOULE HEATING METHOD;

THIN FILMS;

EID: 3042545686     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-2544-y     Document Type: Article

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