Strain effect in determining the geometric shape of self-assembled quantum dot

Journal of Physics D: Applied Physics

Volumn 42, Issue 12, 2009, Pages

  Yang, X F ^a,b   Fu, K ^a   Lu, W ^b   Xu, W L ^c   Fu, Y ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c EAST CHINA NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTIC STRAIN ENERGY; EXPERIMENTAL OBSERVATION; FORCE-FIELD APPROACHES; GAAS; GEOMETRIC SHAPE; INAS; INP; LATTICE RELAXATION; LAYER GROWTH; PYRAMIDAL SHAPE; SELF ASSEMBLED QUANTUM DOTS; SI MATRIX; STRAIN EFFECT; STRAIN FIELDS; STRANSKI-KRASTANOV MODE;

GERMANIUM; INDIUM ARSENIDE; SEMICONDUCTING INDIUM; STRAIN ENERGY; SURFACE RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70149101762     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/12/125414     Document Type: Article

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