SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 589, Issue 1-3, 2005, Pages 91-97

On the location of InAs quantum dots on GaAs(0 0 1)

(4) Xu, M C a Temko, Y a Suzuki, T a Jacobi, K a

a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

Author keywords

GaAs; InAs; Molecular beam epitaxy

Indexed keywords

DEPOSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHASE TRANSITIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; WETTING;

INAS; THREE-DIMENSIONAL (3D) ISLANDS; WETTING LAYERS;

INDIUM COMPOUNDS;

EID: 23244466055 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2005.05.052 Document Type: Article

Times cited : (19)

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