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Volumn 85, Issue 15, 2004, Pages 3050-3052
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Effect of strain-compensation in stacked 1.3 μm InAs/GaAs quantum dot active regions grown by metalorganic chemical vapor deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTALLINE QUALITY;
EPITAXIAL MATERIALS;
STRAIN COMPENSATION;
THRESHOLD CURRENTS;
CHEMICAL VAPOR DEPOSITION;
CURRENT DENSITY;
GROUND STATE;
MATHEMATICAL MODELS;
PHOTOLUMINESCENCE;
SEMICONDUCTOR QUANTUM DOTS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 8644249815
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1805707 Document Type: Article |
Times cited : (75)
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References (16)
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