High peak-to-valley ratios observed in InAs/Inp resonant tunneling quantum dot stacks

Applied Physics Letters

Volumn 78, Issue 21, 2001, Pages 3232-3234

  Borgstrom, M ^a   Bryllert, T ^a   Sass, T ^a   Gustafson, B ^a   Wernersson, L E ^a   Seifert, W ^a   Samuelson, L ^a  

^a Tosoh SMD Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035926981     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1374235     Document Type: Article

References (14)

1. P. Mazumder, S. Kulkarni, M. Bhattacharya, J. P. Sun, and G. I. Haddad, Proc. IEEE 86, 664 (1998).
2. M. A. Reed, J. N. Randall, J. H. Luscombe, W. R. Frensley, R. J. Aggarwal, R. J. Matyi, T. M. Moore, and A. E. Wetsel, Adv. Math. 29, 267 (1989).
3. I. E. Itskevich, T. Ihn, A. Thornton, M. Henini, T. J. Foster, P. Moriarty, A. Nogaret, P. H. Beton, L. Eaves, and P. C. Main, Phys. Rev. B 54, 16401 (1996).
4. M. Narihiro, G. Yusa, Y. Nakamura, T. Noda, and H. Sakaki, Appl. Phys. Lett. 70, 105 (1997).
5. S. Yoon, Y. Moon, T.-W. Lee, and E. Yoon, Appl. Phys. Lett. 74, 2029 (1999).
6. M. Taskinen, M. Sopanen, H. Lipsanen, J. Tulkki, T. Tuomi, and J. Ahopelt, Surf. Sci. 376, 60 (1997).
7. M. Borgstrom, T. Bryllert, B. Gustafson, J. Johansson, T. Sass, L.-E. Wernersson, W. Seifert, and L. Samuelson, J. Electron. Mater. 30, 482 (2001).
8. M. Borgstrom, J. Johansson, L. Landin, and W. Seifert, Appl. Surf. Sci. 165, 245 (2000).
9. H. Petterson, C. Pryor, L. Landin, M.-E. Pistol, N. Carlsson, W. Seifert, and L. Samuelson, Phys. Rev. B 61, 4795 (1999).
10. M. Holm, C. Pryor, and M.-E. Pistol (unpublished results).
11. W. Seifert, N. Carlsson, J. Johansson, M.-E. Pistol, and L. Samuelson, J. Cryst. Growth 170, 39 (1997).
12. N. Carlsson, T. Junno, L. Montelius, M.-E. Pistol, L. Samuelson, and W. Seifert, J. Cryst. Growth 191, 347 (1998).
13. W. B. Garnett, Phys. Rev. B 44, 3064 (1991).
14. Simple modeling where single-stack-tunneling peaks are randomly generated within a normal distribution centered at a bias of 0.4 V. It reproduces the experimental results to a high accuracy.