Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy

Journal of Crystal Growth

Volumn 285, Issue 1-2, 2005, Pages 137-145

  Kim, Hyung Seok ^a   Suh, Ju Hyung ^a   Park, Chan Gyung ^a   Lee, Sang Jun ^b   Noh, Sam Kyu ^b   Song, Jin Dong ^c   Park, Yong Ju ^c   Choi, Won Jun ^c   Lee, Jung Il ^c  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

A1. Thermal stability of quantum dot; A1. Transmission electron microscopy (TEM); A2. Quantum dot structure; A3. InAs GaAs quantum dot

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIFFUSION; EPITAXIAL GROWTH; EVAPORATION; HEATING; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER EPITAXY (ALE); INAS/GAAS QUANTUM DOTS; QUANTUM DOT STRUCTURES; THERMAL STABILITY OF QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 27144538842     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.08.020     Document Type: Article

References (20)

1. J.-Y. Marzin, J.-M. Gérard, A. Izraël, D. Barrier, and G. Bastard Phys. Rev. Lett. 73 1994 716
2. Y. Arakawa, and H. Sakaki Appl. Phys. Lett. 40 1982 939
3. H. Shoji, K. Mukai, N. Otsuka, M. Sugawara, T. Uchida, and H. Ishikawa IEEE Photonics Technol. Lett. 7 1995 1385
4. G. Yusa, and H. Sakaki Electron. Lett. 7 1995 1385
5. J. Phillips, K. Kamath, and P. Bhattacharya Appl. Phys. Lett. 72 1998 2020
6. A.E. Romanov, P.M. Petroff, and J.S. Speck Appl. Phys. Lett. 74 1999 2280
7. M. Grundmann, O. Stier, and D. Bimberg Phys. Rev. B 52 1995 11969
8. C.W. Snyder, B.G. Orr, D. Kessler, and L.M. Sander Phys. Rev. Lett. 66 1991 3032
9. H. Yamaguchi, M.R. Fahy, and B.A. Joyce Appl. Phys. Lett. 69 1996 776
10. G.D. Lian, J. Yuan, L.M. Brown, G.H. Kim, and D.A. Ritchie Appl. Phys. Lett. 73 1998 49
11. Peter D. Miller, Chuan-Pu Liu, and J. Murray Gibson Ultramicroscopy 84 2000 225
12. J.D. Song, Y.M. Park, J.C. Shin, J.G. Lim, Y.J. Park, W.J. Choi, I.K. Han, J.I. Lee, H.S. Kim, and C.G. Park J. Appl. Phys. 96 2004 4122
13. J.G. Lim, Y.J. Park, Y.M. Park, J.D. Song, W.J. Choi, I.K. Han, W.J. Jo, J.I. Lee, T.W. Kim, H.S. Kim, and C.G. Park J. Crystal Growth 275 2005 415
14. P. Frigeri, A. Bosacchi, S. Franchi, P. Allegri, and V. Avanzini J. Crystal Growth 201/202 1999 1136
15. N.N. Ledentsov, V.A. Shchukin, M. Grundmann, N. Kirstaedter, J. Böhrer, O. Schmidt, D. Bimberg, V.M. Ustinov, A.Y. Egorov, A.E. Zhukov, P.S. Kop'ev, S.V. Zaitsev, N.Y. Gordeev, Z.I. Alferov, A.I. Borovkov, A.O. Kosogov, S.S. Ruvimov, P. Werner, U. Gösele, and J. Heydenreich Phys. Rev. B. 54 1996 8743
16. R. Songmuang, S. Kiravittaya, and O.G. Schmidt J. Crystal Growth 249 2003 416
17. Michio Kiritani Ultramicroscopy 39 1991 135
18. Jung-Goo Lee, and Hirotaro Mori J. Electron Microscopy 52 2003 5
19. R.F. Egerton, P. Li, and M. Malac Micron. 35 2004 399
20. F. Heinrichdorff, M. Grundmann, O. Stier, A. Krost, and D. Bimberg J. Crystal Growth 195 1998 540