Analysis of quantum-dot-induced strain and electric fields in piezoelectric semiconductors of general anisotropy

International Journal of Solids and Structures

Volumn 43, Issue 25-26, 2006, Pages 7593-7608

  Wang, C Y ^a   Denda, M ^b   Pan, E ^c  

^a SCHLUMBERGER DOLL RESEARCH   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c University of Akron   (United States)

Author keywords

Self organized quantum dots; The Green's functions; Three dimensional QDs of arbitrary shape and semiconductor substrates with the most general anisotropy and piezoelectricity

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; FINITE DIFFERENCE METHOD; FINITE ELEMENT METHOD; GREEN'S FUNCTION; SEMICONDUCTOR QUANTUM DOTS; STRAIN;

ATOMISTIC TECHNIQUES; ESHELBY INCLUSION PROBLEM; SELF-ORGANIZED QUANTUM DOTS; VOLUME INTEGRAL EQUATION;

PIEZOELECTRIC MATERIALS;

EID: 33750298279     PISSN: 00207683     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijsolstr.2006.03.019     Document Type: Article

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