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Journal of Crystal Growth

Volumn 191, Issue 3, 1998, Pages 347-356

Growth of self-assembled InAs and InAsxP1-x dots on InP by metalorganic vapour phase epitaxy

(6) Carlsson, N a Junno, T a Montelius, L a Pistol, M E a Samuelson, L a Seifert, W a

a LUND UNIVERSITY (Sweden)

Author keywords

AFM; Alloying; InAs InP; MOVPE; PL; Self assembled dots

Indexed keywords

ALLOYING; ATOMIC FORCE MICROSCOPY; ENERGY GAP; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

SELF ASSEMBLED DOTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032114914 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00143-2 Document Type: Article

Times cited : (96)

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