Similarity between the first ionized state of the oxygen vacancy double donor in tantalum oxide and the first ionized state of the cadmium vacancy double acceptor in cadmium sulfide

Applied Physics Letters

Volumn 90, Issue 22, 2007, Pages

  Lau, W S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM COMPOUNDS; ELECTRON TRAPS; ENERGY BARRIERS; IONIZATION; LOW TEMPERATURE EFFECTS; TANTALUM COMPOUNDS;

CADMIUM SULFIDES; CADMIUM VACANCY DOUBLE ACCEPTORS; IONIZED STATES; TANTALUM OXIDES;

OXYGEN VACANCIES;

EID: 34249901536     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2744485     Document Type: Article

References (26)

1. R. Ramprasad, J. Appl. Phys. 94, 5609 (2003).
2. H. Sawada and K. Kawakami, J. Appl. Phys. 86, 956 (1999).
3. K. Xiong, J. Robertson, M. C. Gibson, and S. J. Clark, Appl. Phys. Lett. 87, 183505 (2005).
4. S. Hall, O. Buiu, and Y. Lu, IEEE Trans. Electron Devices 54, 272 (2007).
5. F. G. Ullman, J. Phys. Chem. Solids 28, 279 (1967).
6. W. S. Lau, L. Zhong, T. Han, and N. P. Sandler, Mater. Res. Soc. Symp. Proc. 864, E3.2.1 (2005).
7. A. Rose, Concepts in Photoconductivity and Allied Problems (Wiley, New York, 1963), p. 43.
8. A. Rose, Concepts in Photoconductivity and Allied Problems (Wiley, New York, 1963), p. 126.
9. R. H. Bube, G. A. Dussel, C.-T. Ho, and L. D. Miller, J. Appl. Phys. 37, 21 (1966).
10. W. S. Lau, L. L. Leong, T. Han, and N. P. Sandler, Appl. Phys. Lett. 83, 2835 (2003).
11. W. S. Lau and T. Han, Appl. Phys. Lett. 86, 152107 (2005).
12. W. S. Lau, T. S. Tan, P. Babu, and N. P. Sandler, Appl. Phys. Lett. 90, 112903 (2007).
13. N. Susa, H. Watanabe, and M. Wada, Jpn. J. Appl. Phys. 14, 1733 (1975).
14. N. Susa, H. Watanabe, and M. Wada, Jpn. J. Appl. Phys. 15, 2365 (1976).
15. S.-L. Fu, T.-S. Wu, and M.-P. Houng, Sol. Energy Mater. Sol. Cells 12, 309 (1985).
16. Yasushiro Nishioka (unpublished).
17. W. S. Chan and C. K. Loh, Thin Solid Films 6, 91 (1970).
18. P. S. Pickard and M. V. Davis, J. Appl. Phys. 41, 2636 (1970).
19. G. S. Oehrlein and A. Reisman, J. Appl. Phys. 54, 6502 (1983).
20. R. M. Fleming, D. V. Lang, C. D. W Jones, M. L. Steigenwald, D. W. Murphy, G. B. Alers, Y.-H. Wong, R. B. van Dover, J. R. Kwo, and A. M. Sergent, J. Appl. Phys. 88, 850 (2000).
21. K. Chu, J. P. Chang, M. L. Steigenwald, R. M. Fleming, R. L. Opila, D. V. Lang, R. B. van Dover, and C. D. W Jones, J. Appl. Phys. 91, 308 (2002).
22. G. F. J. Garlick and A. F. Gibson, Proc. Phys. Soc. London 60, 574 (1948).
23. W. S. Lau, P. W. Qian, N. P. Sandler, K. A. McKinley, and P. K. Chu, Jpn. J. Appl. Phys., Part 1 36, 661 (1997).
24. W. S. Lau, P. W. Qian, T. Han, N. P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, and T. T. Sheng, Microelectron. Reliab. 47, 429 (2007).
25. W. S. Lau, K. K. Khaw, T. Han, and N. P. Sandler, Appl. Phys. Lett. 89, 262901 (2006).
26. M. Hussein, G. Lleti, G. Sagnes, G. Bastide, and M. Rouzeyre, J. Appl. Phys. 52, 261 (1981).