Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 3, 2006, Pages 459-466

  Durand, C ^a,f   Valle C ^a   Dubourdieu, C ^b   Kahn, M ^a   Derivaz, M ^a   Blonkowski, S ^c   Jalabert, D ^d   Hollinger, P ^d   Fang, Q ^e   Boyd, I W ^e  

^a Laboratoire Interdisciplinaire de Physique   (France)

^b Grenoble INP Phelma   (France)

^c STMICROELECTRONICS   (France)

^d CEA GRENOBLE   (France)

^e UNIVERSITY COLLEGE LONDON   (United Kingdom)

^f INRS EMT   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS;

METAL-INSULATOR-METAL (MIM) CAPACITORS; PULSED LIQUID INJECTION PLASMA-ENHANCED METAL ORGANIC CHEMICAL VAPOR DEPOSITION; VOLTAGE LINEARITY IMPROVEMENT;

YTTRIUM COMPOUNDS;

EID: 33646577495     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2190649     Document Type: Article

References (40)

1. S. Decoutere, Proceedings of the IEEE Bipolar/CMOS Circuits Technology Meeting, 2000, p. 106.
2. A. Kar-Roy, Proceedings of the IEEE International Interconnect Technology Conference, 1999, p. 245.
3. P. Zurcher, Tech. Dig. - Int. Electron Devices Meet. 2000, 153.
4. J. A. Babcock, S. G. Balster, A. Pinto, C. Dirnecker, P. Steinmann, R. Jumpertz, and B. El-Kkareh, IEEE Electron Device Lett. 22, 230 (2001).
5. The International Technology Roadmap for Semiconductors (ITRS), Semiconductors Industry Association; see also http://public.itrs.net/ for the most recent updates.
6. S. Blonkowski, M. Regache, and A. Halimaoui, J. Appl. Phys. 90, 1501 (2001).
7. P. C. Joshi and N. W. Cole, J. Appl. Phys. 86, 871 (1999).
8. B. C. Lai and J. Y. Lee, J. Electrochem. Soc. 146, 266 (1999).
9. J. Kim, Appl. Phys. Lett. 80, 2734 (2002).
10. S. B. Chen, C. H. Lai, and A. Chin, IEEE Electron Device Lett. 23, 185 (2002).
11. M. Y. Yang, C. H. Huang, A. Chin, C. X. Zhu, B. J. Cho, M. F. Li, and D. L. Kwong, IEEE Microw. Wirel. Compon. Lett. 13, 431 (2003).
12. S. Y. Lee, H. Kim, P. C. McIntyre, K. C. Saraswat, and J. S. Byun, Appl. Phys. Lett. 82, 2874 (2003).
13. H. Hu, C. Zhu, Y. F. Lu, M. F. Li, and B. J. Cho, IEEE Electron Device Lett. 23, 514 (2002).
14. H. Hu, J. Appl. Phys. 94, 551 (2003).
15. K. C. Chiang, C. H. Lai, A. Chin, T. J. Wang, H. F. Chiu, J. R. Chen, S. P. McAlister, and C. C. Chi, IEEE Electron Device Lett. 26, 728 (2005).
16. C. Durand, J. Vac. Sci. Technol. A 22, 655 (2004).
17. M. Y. Yang, D. S. Yu, and A. Chin, J. Electrochem. Soc. 151, F162 (2004).
18. C. Wenger, J. Dabrowski, P. Zaumseil, R. Sorge, P. Formanek, G. Lippert, and H. J. Muessig, Mater. Sci. Semicond. Process. 7, 227 (2004).
19. C. Wenger, Microelectron. Eng. 80, 313 (2005).
20. X. Yu, IEEE Electron Device Lett. 24, 63 (2003).
21. S. Blonkowski (private communication).
22. C. Durand, C. Dubourdieu, C. Valĺe, V. Loup, M. Bonvalot, O. Joubert, H. Roussel, and O. Renault, J. Appl. Phys. 96, 1719 (2004).
23. J. P. Śnateur, R. Madar, F. Weiss, O. Thomas, and A. Abrutis, French Patent No. FR 2707671 (1993), European Patent No. EP 730671 (1994), U.S. Patent No. US 945162 (1999).
24. C. Dubourdieu, J. P. Śnateur, and F. Weiss, Crystal Growth in Thin Solid Films: Control of Epitaxy, edited by, M. Guilloux-Viry, and, A. Perrin, (Research Signpost, Kerala, 2002), pp. 169-206.
25. J. Y. Zhang, L. J. Bie, V. Dusastre, and I. W. Boyd, Thin Solid Films 318, 252 (1998).
26. I. W. Boyd and J. Y. Zhang, Nucl. Instrum. Methods Phys. Res. B 121, 349 (1997).
27. P. Holliger, F. Laugier, and J. C. Dupuy, Surf. Interface Anal. 34, 472 (2002).
28. R. B. van Dover, R. M. Fleming, L. F. Schneemeyer, G. B. Alers, and D. J. Werder, Tech. Dig. - Int. Electron Devices Meet. 1998, 823.
29. S. J. Kim, B. J. Cho, M. F. Li, X. Yu, C. Zhu, A. Chin, and D. L. Kwong, IEEE Electron Device Lett. 24, 730 (2003).
30. S. Blonkowski, M. Regache, and A. Halimaoui, J. Non-Cryst. Solids 303, 108 (2002).
31. S. J. Ding, IEEE Trans. Electron Devices 51, 886 (2004).
32. C. Durand, J. Electrochem. Soc. 152, F217 (2005).
33. C. Dubourdieu (private communication) [results obtained within the European Information Society Technologies (IST) Tantalum pentaOxide Photodeposition on Silicon (TOPS) project].
34. S. J. Kim, B. J. Cho, M. F. Li, C. X. Zhu, A. Chin, and D. L. Kwong, IEEE Electron Device Lett. 24, 442 (2003).
35. H. Hu, IEEE Electron Device Lett. 24, 60 (2003).
36. L. Y. Tu, Proceedings of the Symposium on Very Large Scale Integration, 2003, p. 79.
37. F. Mondon and S. Blonkowski, Microelectron. Reliab. 43, 1259 (2003).
38. S. J. Kim, IEEE Electron Device Lett. 25, 538 (2004).
39. M. Y. Ho, Appl. Phys. Lett. 81, 4218 (2002).
40. S. Van Huylenbroeck, S. Decoutere, R. Venegas, S. Jenei, and G. Winderickx, IEEE Electron Device Lett. 23, 191 (2002).