Impact of post-deposition annealing on surface, bulk and interface properties of RF sputtered AlN films

Materials Science and Technology

Volumn 25, Issue 8, 2009, Pages 1023-1027

  Kar, J P ^a   Mukherjee, S ^b   Bose, G ^a   Tuli, S ^a   Myoung, J M ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b University of Oklahoma   (United States)

^c Yonsei University   (South Korea)

Author keywords

Ain; Annealing; Electrical properties; Morphology; Sputtering

Indexed keywords

AIN; ALN FILMS; ANNEALING TEMPERATURES; ATOMIC FORCE; BOND DENSITIES; C AXIS ORIENTED; CAPACITANCE VOLTAGE MEASUREMENTS; CRYSTALLINITIES; DEPOSITED FILMS; DIELECTRIC BEHAVIOUR; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; GRAIN SIZE; INTERFACE ELECTRONICS; INTERFACE PROPERTY; MORPHOLOGICAL PROPERTIES; MORPHOLOGICAL STUDY; NITROGEN AMBIENT; POST DEPOSITION ANNEALING; RADIO FREQUENCIES; REACTIVE MAGNETRON SPUTTERING; SILICON SUBSTRATES; X- RAY DIFFRACTION;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ELECTRIC POTENTIAL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS;

ANNEALING;

EID: 68949199457     PISSN: 02670836     EISSN: None     Source Type: Journal    
DOI: 10.1179/174328408X287727     Document Type: Article

References (34)

1. Z. R. Song, Y. H. Yu, D. S. Shen, S. C. Zou, Z. H. Zheng, E. Z. Luo and Z. Xie: Mater. Lett., 2003, 57, 4643-4647.
2. F. Engelmark, G. Fucntes, I. V. Katardjiev, A. Harsta, U. Smith and S. Berg: J. Vac. Sci. Technol. A, 2000,18A, (4), 1609-1612.
3. J. A. Ruffner, P. G. Clem, B. A. Tuttle, D. Dimos and D. M. Gonzales: Thin Solid Films, 1999, 354, 256-261.
4. S. R. Mermet, R. Lanz and P. Muralt: Sensors Actuators B, 2006, 114B, 681-686.
5. M. Benetti, D. Cannata, F. di Pietrantonio, V. Foglietti and E. Verona: Appl. Phys. Lett., 2005, 87, 173504-173513
6. M. Clement, L. Vergara, J. Sangrador, E. Iborra and A. Sanz- Hervas: Ultrasonics, 2004, 42, 403-1107
7. C. Caliendo and P. Imperatori, J. App. Phys., 2004, 96, (5), 2610-2615.
8. M. B. Assouar, M. El-Hakiki, O. Elmazria, P. Alnot and C. Tiusan: Diamond Related Mater., 2004, 13, 1111-1115.
9. S. Bender, F. L. Dickert, W. Mokwa and P. Pachatz: Sensors Actuators B, 2003, 93B, 164-168.
10. M. M. D. Ramos, J. B. Almeida, M. I. C. Ferreira and M. P. D. Santos: Thin Solid Films, 1989, 176, 219-226.
11. J. Huang, L. Wang, Q. Shen, C. Lin and O. Mikael: Thin Solid Films, 1999, 340, 137-139.
12. V. Dimitrova, D. Manova, T. Paskova, T. Uzunov, N. Ivanov and D. Dechev: Vacuum, 1998, 51, 161-164.
13. H. P. Loebl, M. Klee, C. Metzmacher, W. Brand, R. Milsom and P. Lok: Mater. Chem. Phys., 2003, 79, 143-146.
14. A. Moustaghfir, E. Tomasella, S. B. Amor, M. Jacquet, J. Cellier and T. Sauvage: Surf. Coat. Technol., 2003, 174-175, 193-196.
15. L. Wang, Y. Pu, W. Fang, J. Dai, C. Zheng, C. Mo, C. Xiong and F. Jiang: Thin Solid Films, 2005, 491, 323-327.
16. J. P. Kar, G. Bose and S. Tuli: Mater. Sci. Semicond. Process., 2005, 8, (6), 646-651.
17. Y. C. Lee, S. Y. Hu, W. Water, Y. S. Huang, M. D. Yang, J. L. Shen, K. K. Tiong and C. C. Huang: Solid State Comm., 2007,143, 250-254.
18. J. Ye, S. Gu, S. Zhu, T. Chen, L. Hu, F. Qin, R. Zhang, Y. Shi and Y. Zheng: J. Crystal Growth, 2002, 243, 151-156.
19. P. Victor, J. Nagaraju and S. B. Krupanidhi: Semicond. Sci. Technol., 2003, 18, 183-189.
20. E. H. Nicolian and J. R. Brews: 'Metal oxide semiconductor physics and technology'; 1982, New York, John Wiley and Sons.
21. B. H. Vromen: Appl. Phys. Lett., 1975, 27, (3), 152-154.
22. B. J. O'Sullivan, P. K. Hurley, F. N. Cubaynes, P. A. Stolk and F. P. Widdershoven: Microelectron. Reliab., 2001, 41, 1053-1056.
23. A. U. Ahmed, A. Rys, N. Singh, J. H. Edgar and Z. J. Yu: J. Electrochem. Soc. 1992, 139, (4), 1146-1150.
24. S. Alexandrova and A. Szekeres: Phys. Stat. Sol., 1985, 92, 589-594.
25. L. Vergara , M. Clement, E. Iborra, A. Sanz-Hervas , J. G. Lopez, Y. Morilla, J. Sangrador and M. A. Respaldiza: Diamond Related Mater., 2004, 13, 839-842.
26. B. L. Yang, H. Wong and Y. C. Cheng: Solid State Elec., 1994, 37, (3), 481-1186
27. W. R. Harrel and J. Frey: Thin Solid Films, 1999, 352, 195-204.
28. P. Rabiller, J. E. Klemberg-Sapieha, M. R. Wertheimer and A. Yelon: Proc. 3rd Int. Conf. on 'Conduction and breakdown in solid dielectrics', Trondheim, Norway, July 1989, IEEE, 299-303.
29. H. Sato, H. Kato, Y. Ohki, K. S. Seol and T. Noma: Proc. Int. Symp. on 'Electrical insulating materials', Himeji, Japan, November 2001, IEEE, 148-151.
30. M. Tanase, C. Morosanu, V. Dumitru, L. Tugulea and N. Tomozeiu: IEEE Ultrasonic Symp., 1998, 221-224.
31. S. Bakalova, S. Simeonov, E. Kafedjiiska, A. Szekeres, S. Grigorescu, G. Socol, E. Axente and I. Mihailescu: Plas. Process. Poly., 2006, 3, 205-208.
32. T. Adam, J. Kolodzey, C. P. Swann, M. W. Tsao and J. F. Rabolt: Appl. Surf. Sci., 2001, 175-176, 428-1135
33. Z. An, C. Men, Z. Xu, P. K. Chu and C. Lin: Surf. Coat. Technol., 2005, 196, 130-134.
34. F. Engelmark, J. Westlinder, G. F. Iriarte, I. V. Katardjiev and J. Olsson: IEEE Trans. Elec. Dev., 2003, 50, (5), 1214-1219.