Electrical characterization of AlN MIS and MIM structures

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1214-1219

  Engelmark, Fredrik ^a   Westlinder, Jörgen ^a   Iriarte, Gonzalo Fuentes ^a   Katardjiev, Ilia V ^a   Olsson, Jörgen ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

Aluminum compounds; Dielectric films; Leakage currents; MIM devices; MIS devices

Indexed keywords

ALUMINUM NITRIDE; LEAKAGE CURRENTS; MIM DEVICES; MIS DEVICES; MOLYBDENUM; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SPUTTER DEPOSITION; THIN FILMS;

DIELECTRIC LOSS; POLYCRYSTALLINE FILMS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0041743990     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813231     Document Type: Article

References (29)

1. W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg, and S. L. Gilbert, "Epitaxially grown AlN and its optical band gap," J. Appl. Phys., vol. 44, pp. 292-6, 1973.
2. F. Engelmark, G. Fuentes, I. V. Katardjiev, A. Harsta, U. Smith, and S. Berg, "Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition," J. Vac. Sci. Technol. A, vol. 18, pp. 1609-12, 2000.
3. S. Strite, M. E. Lin, and H. Morkoc, "Progress and prospects for GaN and the III-V nitride semiconductors," Thin Solid Films, vol. 231, pp. 197-210, 1993.
4. K. S. Stevens, M. Kinniburgh, A. F. Schwartzman, A. Ohtani, and R. Beresford, "Demonstration of a silicon field-effect transistor using AlN as the gate dielectric," Appl. Phys. Lett., vol. 66, pp. 3179-81, 1995.
5. S. Tomabechi, K. Wada, S. Saigusa, H. Matsuhashi, H. Nakase, K. Masu, and K. Tsubouchi, "Development of high quality AlN epitaxial film for 2.4 GHz front-end SAW matched filter," Proc. IEEE Ultrason. Symp., vol. 2, pp. 263-267, 1999.
6. A. H. Khan, J. M. Meese, E. J. Charlson, E. M. Charlson, T. Stacy, S. Khasavinah, T. Sung, G. Popovici, M. A. Prelas, J. E. Chamberlain, and H. W. White, "AlN on diamond thin films grown by chemical vapor deposition methods," in Proc. SPIE Int. Soc. Opt. Eng., vol. 2151, 1994, pp. 44-9.
7. C. L. Aardahl, J. W. Rogers Jr., H. K. Yun, Y. Ono, D. J. Tweet, and S.-T. Hsu, "Electrical properties of AlN thin films deposited at low temperature on Si(100)," Thin Solid Films, vol. 346, pp. 174-80, 1999.
8. A. U. Ahmed, A. Rys, N. Singh, J. H. Edgar, and Z. J. Yu, "The electrical and compositional properties of AlN-Si interfaces," J. Electrochem. Soc., vol. 139, 1992.
9. M. Razeghi, X. Zhang, P. Kung, A. Saxler, D. Walker, K. Y. Lim, and K. S. Kim, "Recent advances in III-nitride materials, characterization and device applications," in Proc. SPIE Int. Soc. Opt. Eng., vol. 3179, 1997, pp. 2-11.
10. M. Ishihara, S. J. Li, H. Yumoto, K. Akashi, and Y. Ide, "Control of preferential orientation of AlN films prepared by the reactive sputtering method," Thin Solid Films, vol. 316, pp. 152-157, 1998.
11. H. Okano, Y. Takahashi, T. Tanaka, K. Shibata, and S. Nakano, "Preparation of c-axis oriented AlN thin films by low-temperature reactive sputtering," Jpn. J. Appl. Phys., pt. 1, vol. 31, pp. 3446-3451, 1992.
12. H. C. Lee and J. Y. Lee, "Effects of sputtering pressure and nitrogen concentrations on the preferred orientation of AlN thin films," J. Mater. Sci., vol. 5, pp. 221-225, 1994.
13. H. Maiwa and K. Okazaki, "Preparation of AlN thin films by reactive sputtering and optical emission spectroscopy during sputtering," Ferroelectrics, vol. 131, pp. 83-89, 1992.
14. F. Brunet, F. Randriamora, A. Deneuville, P. Germi, B. Anterion, and M. Pernet, "Highly textured hexagonal AlN films deposited at low temperature by reactive cathodic sputtering," Mater. Sci. Eng. B, vol. 59, pp. 88-93, 1999.
15. M. A. Dubois, P. Muralt, and V. Plessky, "BAW resonators based on aluminum nitride thin films," Proc. IEEE Ultrason. Symp., vol. 2, pp. 907-910, 1999.
16. H. L. Kao, P. J. Shih, and C.-H. Lai, "The study of preferred orientation growth of aluminum nitride thin films on ceramic and glass substrates," Japan. J. Appl. Phys., pt. 1, vol. 38, pp. 1526-9, 1999.
17. R. S. Naik, R. Reif, J. J. Lutsky, and C. G. Sodini, "Low-temperature deposition of highly textured aluminum nitride by direct current magnetron sputtering for applications in thin-film resonators," J. Electrochem. Soc., vol. 146, pp. 691-6, 1999.
18. X.-H. Xu, H.-S. Wu, C.-J. Zhang, and Z.-H. Jin, "Morphological properties of AlN piezoelectric thin films deposited by DC reactive magnetron sputtering," Thin Solid Films, vol. 388, pp. 62-7, 2001.
19. G. F. Iriarte, F. Engelmark, and I. V. Katardjiev, "Reactive sputter deposition of highly oriented AlN films at room temperature," Mater. Res. Soc., vol. 17, pp. 1469-1475, 2002.
20. F. Engelmark, G. F. Iriarte, and I. V. Katardjiev, "Selective etching of Al/AlN structures for metallization of surface acoustic wave devices," J. Vac. Sci. Technol. B, vol. 20, pp. 843-848, 2002.
21. W.M. Werner, "The work function difference of the MOS-system with aluminum field plates and polycrystalline silicon field plates," Solid-State Electron., vol. 17, pp. 769-75, 1974.
22. S. M. Sze, "Conduction processes in insulators," in Phys. Semicond. Devices, 2 ed. New York: Wiley, 1981, p. 403.
23. T. Ouisse, H. P. D. Schenk, S. Karmann, and U. Kaiser, "Electrical characterization of the AlN/Si(111) system," Mater. Sci. Forum, vol. 264-268, pp. 1389-92, 1998.
24. W. J. Zhu, T.-P. Ma, T. Tamagawa, J. Kim, and Y. Di, "Current transport in metal/hafnium oxide/silicon structure," IEEE Electron Device Lett., vol. 23, pp. 97-99, Feb. 2002.
25. C. I. Wu and A. kahn, "Electronic states at aluminum nitride (0001) - 1 × 1 surfaces," Appl. Phys. Lett., vol. 74, pp. 546-548, 1998.
26. V. Dimitrova, D. Manova, and E. Valcheva, "Optical and dielectric properties of DC magnetron sputtered AlN thin films correlated with deposition conditions," Mater. Sci. Eng. B, vol. B68, pp. 1-4, 1999.
27. A. J. Noreika, M. H. Francombe, and S. A. Zeitman, "Dielectric properties of reactively sputtered films of aluminum nitride," J. Vac. Sci. Technol., vol. 6, pp. 194-7, 1969.
28. M. A. Dubois and P. Muralt, "Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications," Appl. Phys. Lett., vol. 74, pp. 3032-3034, 1999.
29. M. Anwar and C. A. Hogarth, "Effect of film thickness and substrate deposition temperature on the a.c. electrical properties of molybdenum trioxide," Int. J. Electron., vol. 66, pp. 901-12, 1989.