Influence of rapid thermal annealing on morphological and electrical properties of RF sputtered AlN films

Materials Science in Semiconductor Processing

Volumn 8, Issue 6, 2005, Pages 646-651

  Kar, J P ^a   Bose, G ^a   Tuli, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

AlN; Electrical properties; Microstructure; RTA; Sputtering

Indexed keywords

ALUMINUM NITRIDE; ANNEALING; BAND STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MATERIALS SCIENCE; MICROSTRUCTURE; SEMICONDUCTING FILMS; SPUTTER DEPOSITION; SUBSTRATES; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

ABSORPTION BANDS; ELECTRICAL PROPERTIES; INSULATOR CHARGE DENSITY; MICRO-CRACKS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33744481820     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.04.001     Document Type: Article

References (27)

1. Engelmark F., Fucntes G., Katardjiev I.V., Harsta A., Smith U., and Berg S. J Vac Sci Technol A 18 4 (2000) 1609
2. Ruffner J.A., Clem P.G., Tuttle B.A., Dimos D., and Gonzales D.M. Thin Solid Films 354 (1999) 256
3. Caliendo C., and Imperatori P. J Appl Phys 96 5 (2004) 2610
4. Samman A., Gebremariam S., Rimai L., Zhang X., Hangas J., and Auner G.W. J Appl Phys 87 6 (2000) 3101
5. Gudovskikh A.S., Alvarez J., Kleider J.P., Afanasjev V.P., Luchinin V.V., Sazanov P., et al. Sensors Actuators A 113 (2004) 355
6. Belyanin A.F., Bouilov L.L., Zhirnov V.V., Kamenev A.I., Kovalskij K.A., and Spitsyn B.V. Diamond Relat Mat 8 (1999) 369
7. Fuflyigin V., Salley E., Osinsky A., and Norris P. Appl Phys Lett 77 19 (2000) 3075
8. Qiu Y., and Gao L. J Eur Ceram Soc 23 (2003) 2015
9. Radwan M, Bahgat M, El-Geassy AA. J The Eur Ceram Soc 2005, in press.
10. Gadre K.S., and Alford T.L. Thin Solid Films 394 (2001) 125
11. Jiang S.W., Zhang Q.Y., Li Y.R., Zhang Y., Sun X.F., and Jiang B. J Cryst Growth 274 (2005) 500
12. Domínbuez C., Rodríguez J.A., Muñoz F.J., and Zine N. Thin Solid Films 346 (1999) 202
13. Kim H.W., and Kim N.H. Mat Sci Semicond Proc 7 (2004) 1
14. Yang V.K., Groenert M., Leitz C.W., Pitera A.J., Currie M.T., and Fitzgerald E.A. J Appl Phys 93 7 (2003) 3859
15. Bethoux J.M., Vennégués P., Natali F., Feltin E., Tottereau O., Nataf G., et al. J Appl Phys 94 10 (2003) 6499
16. Zhao Z.B., Yalisove S.M., Rek Z.U., and Bilello J.C. J Appl Phys 92 12 (2002) 7183
17. Cheng H., and Hing P. Surf Coat Technol 167 (2003) 297
18. Oliveira I.C., Grigorov K.G., Maciel H.S., Massi M., and Otani C. Vacuum 75 (2004) 331
19. Auger M.A., Vazquez L., Jergel M., Sanchez O., and Albella J.M. Surf Coat Technol 180-181 (2004) 140
20. Adam T., Kolodzey J., Swann C.P., Tsao M.W., and Rabolt J.F. Appl Surf Sci 175-176 (2001) 428
21. Gerova E.V., Ivanov N.A., and Kirov K.I. Thin Solid Films 81 (1981) 201
22. Nicolian EH, Brews JR. Metal oxide semiconductor physics and technology. New York: Wiley; 1982. p. 325, 426.
23. O'Sullivan B.J., Hurley P.K., Cubaynes F.N., Stolk P.A., and Widdershoven F.P. Microelectronics Reliab 41 (2001) 1053
24. Martínez F.L., Andrés E.s., Prado A.d., Mártil I., Bravo D., and López F.J. J Appl Phys 90 3 (2001) 1573
25. Vromen B.H. Appl Phys Lett 27 3 (1975) 152
26. Kar J.P., Bose G., and Tuli S. Surf Coat Technol 198 1-3 (2005) 64
27. Victor P., Nagaraju J., and Krupanidhi S.B. Semicond Sci Technol 18 (2003) 183