Deposition and simultaneous etching of Si in the chemical vapor deposition (CVD) process: approach by the charged cluster model

Journal of Crystal Growth

Volumn 205, Issue 1, 1999, Pages 59-63

  Hwang, Nong M ^a,b  

^a Seoul National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; NUCLEATION; PLASMA ETCHING; SEMICONDUCTING FILMS; SOLUBILITY; TEMPERATURE;

CHARGED CLUSTER MODEL; DENSE DIAMOND FILM; GAS PHASE NUCLEATION; RETROGRADE SOLUBILITY;

SEMICONDUCTING SILICON;

EID: 0032598218     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00247-X     Document Type: Article

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