Effect of electric bias on the deposition behavior of silicon on flexible polyethylene terephthalate (PET) during hot-wire chemical vapor deposition

Journal of Crystal Growth

Volumn 310, Issue 15, 2008, Pages 3668-3673

  Lee, Jae Ik ^a   Hwang, Nong Moon ^a  

^a Seoul National University   (South Korea)

Author keywords

A1. Crystallites; A1. Nanostructures; A3. Chemical vapor deposition processes; B2. Semiconducting silicon

Indexed keywords

ACOUSTIC EMISSIONS; CHEMICAL VAPOR DEPOSITION; CORROSION RESISTANT ALLOYS; ELECTROACUPUNCTURE; GAS DYNAMICS; GASES; GROWTH RATE; INERT GAS WELDING; IRON; METALLIC FILMS; METALLIZING; NANOPARTICLES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NONMETALS; PHASE BEHAVIOR; POLYESTERS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRON EMISSION TOMOGRAPHY; SILICON; STAINLESS STEEL; STEEL; STEEL ANALYSIS; STEEL CORROSION; STEEL METALLURGY; SUBSTRATES; THERMOPLASTICS; VAPORS; WIRE;

(100) SILICON; APPLIED (CO); CRYSTALLINE SILICONS; DEPOSITION BEHAVIOR; ELECTRIC BIAS; ELSEVIER (CO); FILAMENT TEMPERATURE; FLEXIBLE SUBSTRATES; GAS PHASE; HOT-WIRE CHEMICAL VAPOR DEPOSITION (HW-CVD); LOW TEMPERATURE (LTR); POLYETHYLENE TEREPHTHALATE (PET); SILICON FILMS; SILICON NANOPARTICLES (SI-NP); TWO STEP GROWTH; ZERO BIAS;

MICROCRYSTALLINE SILICON;

EID: 46749103996     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.05.022     Document Type: Article

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