Dominant rate process of silicon surface etching by hydrogen chloride gas

Thin Solid Films

Volumn 489, Issue 1-2, 2005, Pages 104-110

  Habuka, Hitoshi ^a   Suzuki, Takahiro ^a   Yamamoto, Sunao ^a   Nakamura, Akio ^a   Takeuchi, Takashi ^a   Aihara, Masahiko ^a  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

Dominant rate process; Etch rate; Hydrogen chloride; Silicon

Indexed keywords

CHEMICAL ANALYSIS; CHEMICAL REACTORS; ETCHING; HYDROGEN; MATHEMATICAL MODELS; SILICON COMPOUNDS; SURFACE TREATMENT; VECTORS;

DOMINANT RATE PROCESS; DONOR STATE; ETCH RATE; HYDROGEN CHLORIDE;

SILICON;

EID: 23144432849     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.04.121     Document Type: Article

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