Effects of the electric bias on the deposition behavior of silicon films on glass during hot-wire chemical vapor deposition

Journal of Crystal Growth

Volumn 310, Issue 19, 2008, Pages 4368-4372

  Lee, Dong Kwon ^a   Chung, Yung Bin ^a   Kim, Joong Kyu ^a   Hwang, Nong Moon ^a  

^a Seoul National University   (South Korea)

Author keywords

A1. Characterization; A1. Crystallites; A1. Electric bias; A3. Chemical vapor deposition processes; B2. Semiconducting silicon

Indexed keywords

GLASS; OPTICAL GLASS; PHOTORESISTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; SURFACE ROUGHNESS; THICK FILMS;

A1. CHARACTERIZATION; A1. CRYSTALLITES; A1. ELECTRIC BIAS; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B2. SEMICONDUCTING SILICON;

MICROCRYSTALLINE SILICON;

EID: 51649092066     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.041     Document Type: Article

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