The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrode

Applied Physics Letters

Volumn 85, Issue 16, 2004, Pages 3525-3527

  Lu, Wen Tai ^a   Lin, Po Ching ^a   Huang, Tiao Yuan ^a   Chien, Chao Hsin ^b   Yang, Ming Jui ^b   Huang, Ing Jyi ^b   Lehnen, Peer ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTANCE; ELECTRODES; ELECTRON TUNNELING; HAFNIUM COMPOUNDS; MATHEMATICAL MODELS; MOS CAPACITORS; OXIDES; QUANTUM THEORY; TITANIUM NITRIDE;

EQUIVALENT OXIDE THICKNESS (EOT); FLATBAND VOLTAGE SHIFT; GATE ELECTRODES; WORK FUNCTIONS;

HOLE TRAPS;

EID: 9744263208     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1808228     Document Type: Article

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