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Volumn 75, Issue 19, 1999, Pages 2966-2968

Hole trapping due to anode hole injection in thin tunnel gate oxides in memory devices under Fowler-Nordheim stress

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042441464 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.125203 Document Type: Article

Times cited : (18)

References (7)

1
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- Y. B. Park and D. K. Schroder, IEEE Trans. Electron Devices ED-45, 1361 (1998).
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- Park, Y.B.¹ Schroder, D.K.²

2
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- D. J. DiMaria, IEEE Electron Device Lett. EDL-16 184 (1995).
- (1995) IEEE Electron Device Lett. , vol.EDL-16 , pp. 184
- DiMaria, D.J.¹

3
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- D. J. DiMaria, E. Cartier, and D. A. Buchanan, J. Appl. Phys. 80, 304 (1996).
- (1996) J. Appl. Phys. , vol.80 , pp. 304
- DiMaria, D.J.¹ Cartier, E.² Buchanan, D.A.³

4
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- P. Samanta, Solid-State Electron. 43, 1677 (1999).
- (1999) Solid-State Electron. , vol.43 , pp. 1677
- Samanta, P.¹

5
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- private communication
- D. J. DiMaria (private communication).
- DiMaria, D.J.¹

6
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- D. J. DiMaria, D. A. Buchanan, J. H. Stathis, and R. E. Stahlbush, J. Appl. Phys. 77, 2032 (1995).
- (1995) J. Appl. Phys. , vol.77 , pp. 2032
- DiMaria, D.J.¹ Buchanan, D.A.² Stathis, J.H.³ Stahlbush, R.E.⁴

7
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- D. Arnold, E. Cartier, and D. J. DiMaria, Phys. Rev. B 49, 10278 (1994).
- (1994) Phys. Rev. B , vol.49 , pp. 10278
- Arnold, D.¹ Cartier, E.² DiMaria, D.J.³

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