Charge carrier generation/trapping mechanisms in HfO2/SiO2 stack

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1964-1967

  Samanta, Piyas ^a,b   Zhu, Chunxiang ^c   Chan, Mansun ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b VIDYASAGAR COLLEGE   (India)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Acceptor and donor like interface traps; Border traps; Hafnium oxide; High k; Proton transport

Indexed keywords

CHARGE CARRIERS; ELECTRON TRAPS; GATE DIELECTRICS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); SILICA;

CONSTANT CURRENT STRESS (CCS); CONSTANT VOLTAGE STRESS (CVS); DIELECTRIC QUALITY; EQUIVALENT OXIDE THICKNESS (EOT);

MOS CAPACITORS;

EID: 34248677882     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.084     Document Type: Article

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