Electrical properties of MIS capacitor using low temperature electron beam gun-evaporated HfAlO dielectrics

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 933-936

  Mikhelashvili, V ^a   Meyler, B ^a   Shneider, J ^a   Kreinin, O ^a   Eisenstein, G ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON GUNS; HAFNIUM COMPOUNDS; MICROELECTROMECHANICAL DEVICES; PERMITTIVITY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); ELECTRON BEAM GUNS (EBG); EQUIVALENT OXIDE THICKNESS (EOT); ROOM TEMPERATURE;

CAPACITORS;

EID: 14644392889     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.022     Document Type: Conference Paper

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