Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures

Journal of Applied Physics

Volumn 85, Issue 9, 1999, Pages 6625-6631

  Pokatilov, E P ^a   Fomin, V M ^a,b,e   Balaban, S N ^a   Gladilin, V N ^a,b   Klimin, S N ^a   Devreese, J T ^b,e   Magnus, W ^c   Schoenmaker, W ^c   Collaert, N ^c   Van Rossum, M ^c,d   De Meyer, K ^c,d  

^a Universitatea de Stat din Moldova   (Moldova)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; CHARGE CARRIERS; MOSFET DEVICES; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

HARTREE APPROXIMATION; POISSON EQUATION; SCHRODINGER EQUATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 13044280799     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370171     Document Type: Article

References (17)

1. S. A. Safron, G. G. Bishop, J. Duan, E. S. Gillman, J. G. Skofronick, N. S. Luo, and P. Ruggerone, Surf. Sci. 272, 358 (1992); S. A. Safron, J. Duan, G. G. Bishop, E. S. Gillman, and J. G. Skofronick, J. Phys. Chem. 97, 1749 (1993).
2. S. A. Safron, G. G. Bishop, J. Duan, E. S. Gillman, J. G. Skofronick, N. S. Luo, and P. Ruggerone, Surf. Sci. 272, 358 (1992); S. A. Safron, J. Duan, G. G. Bishop, E. S. Gillman, and J. G. Skofronick, J. Phys. Chem. 97, 1749 (1993).
3. J. Duan, G. G. Bishop, E. S. Gillman, G. Chern, S. A. Safron, and J. G. Skofronick, J. Vac. Sci. Technol. A 10, 1999 (1992).
4. Q. X. Zhao, N. Magnea, and J. L. Pautrat, Phys. Rev. B 52, 16612 (1995).
5. M. Brandbyge, J. Schiøtz, M. R. Sørensen, P. Stoltze, K. W. Jacobsen, J. K. Nørskov, L. Olesen, E. Laegsgaard, I. Stensgaard, and F. Besenbacher, Phys. Rev. B 52, 8499 (1995).
6. R. R. Hudgins, P. Durourd, J. M. Tenenbaum, and M. F. Jarrold, Phys. Rev. Lett. 78, 4213 (1997).
7. V. Dneprovskii, N. Gushina, O. Pavlov, V. Poborchii, I. Salamatina, and E. Zhukov, Phys. Lett. A 204, 59 (1995).
8. N. Collaert, W. Schoenmaker, and K. De Meyer, Proceedings of SISPAD '98 (Springer, Wien, 1998), p. 235.
9. Y. Apanovich, E. Lyumkis, B. Polsky, A. Shur, and P. Blakey, IEEE Trans. Circuits Syst. 13, 702 (1994).
10. P. Vogl, G. Zandler, A. Rein, and M. Saraniti, in Theory of Transport Properties of Semiconductor Nanostructures, edited by E. Schöll (Chapman & Hall, London, 1998), p. 103.
11. T. Sugano, T. Ikoma, and Y. Takesy, Introduction to Microelectronics (Mir, Moscow, 1988).
12. A. G. Milnes, Deep Impurities in Semiconductor (Wiley, New York, 1973).
13. V. I. Fistul, Heavily Doped Semiconductors (Plenum, New York, 1969).
14. S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer, Wien, 1984).
15. M. Abramowitz and I. Stegun, Handbook of Mathematical Functions (National Bureau of Standards, Washington, DC, 1964).
16. T. Ando, A. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
17. A. Scholze, A. Schenk, and W. Fichtner, Proceedings of SISPAD '98 (Springer, Wien, 1998), p. 203.