Directional effects on bound quantum states for trench oxide quantum wires on (1 0 0)-silicon

Solid-State Electronics

Volumn 48, Issue 3, 2004, Pages 367-371

  Trellakis, A ^a   Ravaioli, U ^b  

^a INTEL CORPORATION   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Directional effects; MOSFET; Quantum wire; Silicon; Surface

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRON ENERGY LEVELS; MOSFET DEVICES; POISSON DISTRIBUTION; SEMICONDUCTING SILICON;

QUANTUM STATES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0344898415     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.08.006     Document Type: Article

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