A silicon-on-insulator quantum wire

Solid-State Electronics

Volumn 39, Issue 1, 1996, Pages 49-51

  Colinge, J P ^a   Baie, X ^a   Bayot, V ^b   Grivei, E ^b  

^a UCL DICE   (Belgium)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; FERMI LEVEL; GATES (TRANSISTOR); MOSFET DEVICES; NUMERICAL METHODS; OSCILLATIONS; SILICON ON INSULATOR TECHNOLOGY; TRANSPORT PROPERTIES;

CURRENT OSCILLATIONS; CURRENT TRANSPORT; DRAIN CURRENT CHARACTERISTICS; GATE VOLTAGE; ONE DIMENSIONAL SYSTEMS; SILICON-ON-INSULATOR QUANTUM WIRE;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0029754323     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00094-A     Document Type: Article

References (7)

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3. P. N. Butcher, Physics of Low-Dimensional Semiconductor Structures (Edited by P. N. Butcher, N. H. March and M. P. Tosi), p. 95. Plenum Press, New York (1993).
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6. DAVINCI™ three-dimensional semiconductor device simulation. TMA Associates, Palo Alto, Calif. (1993).
7. J. P. Colinge, X. Baie and V. Bayot, IEEE Electron Device Lett. 15-6, 193 (1994).