Characterization of inversion tunneling current saturation behavior for MOS(p) capacitors with ultrathin oxides and high-k dielectrics

IEEE Transactions on Electron Devices

Volumn 56, Issue 6, 2009, Pages 1262-1268

  Chen, Chih Hao ^a   Chuang, Kai Chieh ^a   Hwu, Jenn Gwo ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Conduction band offset; Deep depletion; Inversion tunneling current

Indexed keywords

BULK TRAPS; CONDUCTION-BAND OFFSET; CURRENT CONDUCTION MECHANISMS; DEEP-DEPLETION; ENERGY-BAND DIAGRAM; GENERATION-RECOMBINATION; HIGH-K DIELECTRIC; INVERSION TUNNELING CURRENT; SATURATION REGION; TUNNELING CURRENT; ULTRA-THIN OXIDE;

ALUMINUM; CAPACITANCE; CAPACITORS; ELECTRON TUNNELING; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOS CAPACITORS; SILICON COMPOUNDS; TUNNELING (EXCAVATION);

GATE DIELECTRICS;

EID: 67349267761     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2019153     Document Type: Article

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