Bulk generation lifetime studies in semiconductor structures with nonuniform distribution of electrically active defects in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 88-93

  Popov, V M ^a   Pokanevich, A P ^a   Panin, A I ^a  

^a Research Institute for Microdevices   (Ukraine)

Author keywords

Electrically active defects; Generation lifetime of minority carriers; Gettering; MIS structures; Si SiO2 interface

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON DEVICES; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS;

ELECTRICALLY ACTIVE DEFECTS (EAD); METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0036134715     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00905-3     Document Type: Article

References (12)