An improved two-frequency method of capacitance measurement for SrTiO 3 as high-k gate dielectric

IEEE Electron Device Letters

Volumn 23, Issue 9, 2002, Pages 553-555

  Lue, Hang Ting ^b   Liu, Chih Yi ^b   Tseng, Tseung Yuen ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Capacitance measurement; Frequency dispersion; MOS capacitor; STO gate dielectric

Indexed keywords

FREQUENCY DISPERSION;

CAPACITANCE; ELECTRIC RESISTANCE; FINITE ELEMENT METHOD; FREQUENCIES; INDUCTANCE; MATHEMATICAL MODELS; PERMITTIVITY; STRONTIUM COMPOUNDS;

MOS CAPACITORS;

EID: 0036715043     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.802588     Document Type: Article

References (8)

1. High-frequency response of 100 nm integrated CMOS transistors with high-k gate dielectrics
2. 3 thin films
3. A method to characterize the dielectric and interfacial properties of metal - Insulator - Semiconductor structures by microwave measurement
4. MOS capacitance measurements for high-leakage thin dielectrics
5. Applicability limits of the two-frequency capacitance measurement technique for the thickness extraction of ultrathin gate oxide
6. 3 gate dielectrics
7. 3 gate dielectrics