Novel photodetector using MOS tunneling structures

IEEE Electron Device Letters

Volumn 21, Issue 6, 2000, Pages 307-309

  Liu, C W ^a   Liu, W T ^a   Lee, M H ^a   Kuo, W S ^a   Hsu, B C ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTODETECTORS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH;

ULTRATHIN OXIDE;

MOS DEVICES;

EID: 0033729141     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.843159     Document Type: Article

References (6)

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2. C. W. Liu et al., "Light emission and detection by metal oxide silicon tunneling diodes," in IEDM Tech. Dig., 1999, pp. 749-752.
3. H. S. P. Wong, R. T. Chang, E. Crabbe, and P. D. Agnello, "CMOS active pixel image sensors fabricated using a 1.8, 0.25-μm CMOS technology," IEEE Trans. Electron Devices, vol. 45, pp. 889-894, 1998.
4. E. R. Fossum, "CMOS image sensors: Electronic camera-on-a-chip," IEEE Trans. Electron Devices, vol. 44, pp. 1689-1698, 1997.
5. C. W. Liu et al., "Room-temperature electroluminescence from electron-hole plasmas in the metal oxide silicon tunneling diodes," Appl. Phys. Lett., vol. 76, pp. 1516-1518, 2000.
6. D. Scheffer, B. Diericks, and G. Meynants, "Random addressable 2048 × 2048 active pixel image sensor," IEEE Trans. Electron Devices, vol. 44, pp. 1716-1720, 1997.