Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation

Semiconductor Science and Technology

Volumn 21, Issue 12, 2006, Pages 1527-1532

  Kulakci, M ^a   Serincan, U ^a   Turan, R ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ELECTRONS; ION IMPLANTATION; MOS DEVICES; NANOSTRUCTURED MATERIALS; SILICA;

EMISSION PEAKS; INVERSION LAYERS; MEASUREMENT PARAMETERS; NANOCRYSTALS;

LIGHT EMITTING DIODES;

EID: 33846859805     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/12/004     Document Type: Article

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