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Volumn 90, Issue 10, 2007, Pages

Low temperature (<400 °c) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation

b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; EVAPORATION; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON WAFERS; ULTRATHIN FILMS;

ALUMINUM OXIDE; MAGNITUDE REDUCTION; SHADOW EVAPORATION;

DIELECTRIC MATERIALS;

EID: 33947100102 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2711290 Document Type: Article

Times cited : (10)

References (11)

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