Deposition of WNxCy thin films for diffusion barrier application using the dimethylhydrazido (2-) tungsten complex (CH3CN)Cl4W(NNMe2)

Thin Solid Films

Volumn 517, Issue 21, 2009, Pages 6038-6045

  Ajmera, Hiral M ^a   Anderson, Timothy J ^a   Koller, Jürgen ^b   McElwee White, Lisa ^b   Norton, David P ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b University of Florida   (United States)

Author keywords

Auger electron spectroscopy; Chemical vapor deposition; Diffusion barrier; Metallization; Tungsten nitride carbide; X ray diffraction

Indexed keywords

AES DEPTH PROFILE; ATOMIC BONDING; AVERAGE GRAIN SIZE; BENZONITRILE; COPPER DIFFUSION; DEPOSITED FILMS; ELECTRICAL RESISTIVITY; FILM CRYSTALLINITY; FOUR-POINT PROBE; IN-VACUUM; METALLIZATION; NANOCRYSTALLINE; SPUTTER COATING; TEMPERATURE RANGE; TUNGSTEN COMPLEX; TUNGSTEN NITRIDE CARBIDE; TUNGSTEN NITRIDE CARBIDES; VACUUM-ANNEALING; XRD MEASUREMENTS;

AMORPHOUS FILMS; ATOMIC SPECTROSCOPY; AUGERS; CHEMICAL VAPOR DEPOSITION; COPPER; DEPOSITION; DIFFRACTION; DIFFUSION BARRIERS; DIFFUSION COATINGS; ELECTRIC RESISTANCE; ELECTRONS; FILM GROWTH; METALLIZING; NITRIDES; THIN FILMS; TUNGSTEN; TUNGSTEN CARBIDE; VACUUM; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

AUGER ELECTRON SPECTROSCOPY;

EID: 67249110396     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.04.036     Document Type: Article

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