Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications

Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001

Volumn , Issue , 2001, Pages 207-209

  Eisenbraun, E ^a   Van Der Straten, O ^a   Zhu, Yu ^a   Dovidenko, K ^a   Kaloyeros, A ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85001136895     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2001.930062     Document Type: Conference Paper

References (3)

1. The International Technology Roadmap for Semiconductors 2000 Update (Semiconductor Industry Association, San Jose, 2000).
2. M. Ritala, M. Leskelä, Nanotechnology 10, 19 (1999).
3. M. Tsai, S. Sun, H. Chiu, C. Tsai, S. Chuang, Appl. Phys. Lett., 67, 1128 (1995).