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Volumn 397, Issue 1-2, 2001, Pages 109-115

Low temperature chemical vapor deposition of tungsten carbide for copper diffusion barriers

(10) Sun, Y M a Lee, S Y a Lemonds, A M a Engbrecht, E R a Veldman, S a Lozano, J a White, J M a Ekerdt, J G a Emesh, I b Pfeifer, K b

a The University of Texas at Austin (United States)

b SEMATECH (United States)

Author keywords

Barrier; Carbides; Chemical vapor deposition; Diffusion; Tungsten

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; COPPER; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRON DIFFRACTION; FILM GROWTH; LOW TEMPERATURE EFFECTS; PYROLYSIS; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIFFUSION BARRIERS;

TUNGSTEN CARBIDE;

EID: 0035500214 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01367-0 Document Type: Article

Times cited : (53)

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