Evaluation of integrity and barrier performance of atomic layer deposited WNxCy films on plasma enhanced chemical vapor deposited SiO2 for Cu metallization

Applied Physics Letters

Volumn 89, Issue 8, 2006, Pages

  Kim, Ki Su ^a   Lee, Moon Sang ^a   Yim, Sung Soo ^a   Kim, Hyun Mi ^a   Kim, Ki Bum ^a   Park, Hyung Sang ^b   Koh, Wonyong ^b   Li, Wei Min ^c   Stokhof, Maarten ^d   Sprey, Hessel ^d  

^a Seoul National University   (South Korea)

^b ASM Genitech Korea Ltd   (South Korea)

^c ASM Microchemistry Oy   (Finland)

^d ASM BELGIUM   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; PLASMA APPLICATIONS; SILICA; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN COMPOUNDS;

ATOMIC LAYER DEPOSITION (ALD); CAPACITANCE-VOLTAGE MEASUREMENTS; NANOCRYSTALS; PLASMA TREATMENT;

METALLIC FILMS;

EID: 33747860967     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2338768     Document Type: Article

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