The application of ALD WNxCy as a copper diffusion barrier

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 135-137

  Smith, S ^a,f   Book, G ^b,f   Li, W M ^c   Sun, Y M ^d   Gillespie, P ^e,f   Tuominen, M ^c   Pfeifer, K ^a,f  

^a NXP SEMICONDUCTORS   (Netherlands)

^b INTEL CORPORATION   (United States)

^c ASM Microchemistry Oy   (Finland)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^e TEXAS INSTRUMENTS   (United States)

^f SEMATECH   (United States)

Author keywords

Atherosclerosis; Copper; Dielectric measurements; Energy measurement; Failure analysis; Scattering; Spectroscopy; Testing; Thermal stresses; Voltage

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC POWER MEASUREMENT; ELECTROMIGRATION; FAILURE ANALYSIS; INTEGRATED CIRCUIT INTERCONNECTS; SCATTERING; SPECTROSCOPY; TESTING; THERMAL STRESS;

ATHEROSCLEROSIS; COPPER DIFFUSION BARRIER; DIELECTRIC MEASUREMENTS; DUAL DAMASCENE; INTERNATIONAL SEMATECH; TIME TO FAILURE; ULTRA-THIN; VIA RESISTANCE;

COPPER;

EID: 84892210538     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219734     Document Type: Conference Paper

References (6)

1. Semiconductor Industry Association. International Technology Roadmap for Semiconductors: 2002 Edition, Austin TX: SEMATECH\, 2002
2. K.E. Elers, Proceedings of the AMC2001 Advanced Metallization Conference 2001, Materials Research Society, p. 627
3. G. Book, S. Smith, K. Pfeifer, Proceedings of the Materials for Advanced Metallization European Workshop 2002 (MAM2002), 3-6 March 2002, p. 55
4. W.M. Li, et. al., Proceedings of the IEEE2002 International Interconnect Technology Conference, 3-5 June 2002, p. 191
5. W. Besting, et. al., Proceedings of the IEEE2002 International Interconnect Technology Conference, 3-5 June 2002, p. 288
6. S. Smith, W.M. Li, K.E. Elers, K. Pfeifer, Proceedings of the Materials for Advanced Metallization European Workshop 2002 (MAM2002), 3-6 March 2002, p. 51