Control of AI and B doping transients in 6H and 4H SiC grown by vapor phase epitaxy

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 187-192

  Nordell, N ^a   Schoner, A ^a   Linnarsson, M K ^b  

^a ACREO AB   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Aluminum; Boron; Diffusion; Doping memory; Epitaxy; Silicon carbide

Indexed keywords

SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON CARBIDE; VAPOR PHASE EPITAXY;

ATOMIC CONCENTRATION; BACKGROUND DOPING; DIFFUSION LIMITED; DOPANT PRECURSORS; GROWTH INTERRUPTION; ORDERS OF MAGNITUDE; PRECURSOR RATIOS; THREE ORDERS OF MAGNITUDE;

SILICON COMPOUNDS;

EID: 85092362639     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/s11664-997-0148-y     Document Type: Article

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