Solubility limits of dopants in 4H-SiC

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 427-432

  Linnarsson, M K ^a   Zimmermann, U ^a   Wong Leung, J ^b   Schoner A ^c   Janson, M S ^a   Jagadish, C ^b   Svensson, B G ^a,d  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c ACREO AB   (Sweden)

^d UNIVERSITY OF OSLO   (Norway)

Author keywords

Precipitates; SiC; SIMS; Solubility limit; TEM

Indexed keywords

ANNEALING; DOPING (ADDITIVES); FURNACES; PHASE COMPOSITION; PRECIPITATION (CHEMICAL); SECONDARY ION MASS SPECTROMETRY; SOLUBILITY; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

SOLUBILITY LIMITS;

SILICON CARBIDE;

EID: 12244291512     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00694-3     Document Type: Conference Paper

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