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Volumn 264-268, Issue pt 2, 1998, Pages 675-1466
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Proceedings of the 1997 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, ICSCIII. Part 2 (of 2)
[No Author Info available]
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
BIPOLAR SEMICONDUCTOR DEVICES;
ETCHING;
HETEROJUNCTION BIPOLAR TRANSISTORS;
ION IMPLANTATION;
MESFET DEVICES;
MICROMACHINING;
MOSFET DEVICES;
NITRIDES;
OHMIC CONTACTS;
SCHOTTKY BARRIER DIODES;
SILICON CARBIDE;
ALUMINUM NITRIDE;
EIREV;
ELECTRICAL ACTIVATION;
ENERGY ORDER EFFECTS;
GALLIUM NITRIDE;
HOT IMPLANTATION;
POSITRON ANNIHILATION SPECTROSCOPY;
SITE COMPETITION EPITAXY;
SOLID PHASE EPITAXY;
SEMICONDUCTOR MATERIALS;
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EID: 17144473626
PISSN: 02555476
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Review |
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Times cited : (11)
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References (0)
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