Low-temperature halo-carbon homoepitaxial growth of 4H-SiC: Morphology, doping, and role of HCl additive

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 133-136

  Lin, H D ^a   Melnychuk, G ^a   Wyatt, J L ^a   Koshka, Y ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

Aluminum doping; Halide; Halo carbon precursor; HCl; Homoepitaxial growth; Nitrogen doping; Silicon condensation

Indexed keywords

ALUMINUM COMPOUNDS; CARBON; CHLORINE COMPOUNDS; EPILAYERS; EPITAXIAL GROWTH; ETCHING; GROWTH RATE; INDIUM COMPOUNDS; NITROGEN; SILICON CARBIDE; SURFACE MORPHOLOGY; TEMPERATURE;

ALUMINUM DOPING; CARBON PRECURSORS; HALIDE; HOMOEPITAXIAL GROWTH; NITROGEN-DOPING;

MORPHOLOGY;

EID: 38449099927     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.133     Document Type: Conference Paper

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