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Volumn 275, Issue 1-2, 2005, Pages

Growth of high-quality InN films by insertion of high-temperature InN buffer layer

(6) Yamaguchi, T a Kurouchi, M a Naoi, H a Suzuki, A a Araki, T a Nanishi, Y a

Author keywords

A1. Crystal structure; A1. Reflection high energy electron diffraction; A1. Substrate; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NITRIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES; X RAY DIFFRACTION;

BAND-GAP; BUFFER LAYERS; CRYSTALLINITY; SUBSTRATE NITRIDATION;

THIN FILMS;

EID: 15844384025 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.106 Document Type: Conference Paper

Times cited : (11)

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