Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN(0001)

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 1, 2006, Pages 162-166

  Delimitis, A ^a   Gladkov, P ^b   Komninou, Ph ^a   Kehagias, Th ^a   Arvanitidis, J ^a   Ves, S ^a   Katsikini, M ^a   Dimakis, E ^c   Georgakilas, A ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b INSTITUTE OF MATHEMATICS   (Czech Republic)

^c UNIVERSITY OF CRETE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS DENSITY; GROWTH PROCESS; RAMAN PEAKS; RESIDUAL STRAIN;

GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POINT DEFECTS; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 31144431900     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200563506     Document Type: Conference Paper

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