Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 123-126

  Bi, Zhaoxia ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

A1. Indium pre deposition; A2. Vapor liquid solid; A3. MOCVD; B1. InN

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

INDIUM PRE-DEPOSITION; INN; NANOPARTICLES; VAPOR-LIQUID-SOLID;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 33847331533     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.003     Document Type: Article

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