Growth of InN layers by MOVPE using different substrates

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 517-526

  Maleyre, B ^a   Ruffenach, S ^a   Briot, O ^a   Gil, B ^a   Van Der Lee, A ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b UNIVERSITÉ DE MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEPOSITION; ELECTRON MOBILITY; ENERGY GAP; FILM GROWTH; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDING; PHOTOLUMINESCENCE; SAPPHIRE;

INN; MOLAR RATIO; ROOM TEMPERATURE;

INDIUM COMPOUNDS;

EID: 9944219522     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.053     Document Type: Article

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