Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy

Applied Physics Letters

Volumn 90, Issue 1, 2007, Pages

  Losurdo, Maria ^a,b   Giangregorio, Maria M ^a   Bruno, Giovanni ^a   Kim, Tong Ho ^b   Wu, Pae ^b   Choi, Soojeong ^b   Brown, April ^b   Masia, F ^c   Capizzi, M ^c   Polimeni, A ^c  

^a CNR   (Italy)

^b Duke University   (United States)

^c UNIVERSITÀ DI ROMA LA SAPIENZA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; EPITAXIAL FILMS; NUCLEATION LAYERS; PHOTOLUMINESCENCE MEASUREMENTS;

CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; NUCLEATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; THIN FILMS;

INDIUM COMPOUNDS;

EID: 33846064262     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2424664     Document Type: Article

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